DocumentCode :
940726
Title :
Optical Effects on the Static and Dynamic Characteristics of a GaAs MESFET (Short Paper)
Author :
Gautier, J.L. ; Pasquet, D. ; Pouvil, P.
Volume :
33
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
819
Lastpage :
822
Abstract :
In this paper, we describe the effect of light on the S-parameters of a GaAs MESFET. The photon energy is greater than the gap bandwidth of the semiconductor. The photoconductive and photovoltaic dc phenomena in the channel and in the depletion layer are theoretically analyzed with a unidimensional model to describe the light effect on the dc transconductance gm. The comparison between the dc transconductance, without and under illumination, and the theoretical model shows a very close agreement.
Keywords :
FETs; Gallium arsenide; Lighting; MESFETs; Optical fibers; Photovoltaic systems; Power generation; Scattering parameters; Solar power generation; Transconductance;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1985.1133137
Filename :
1133137
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=940726
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