DocumentCode :
940731
Title :
Hole mixing and strain effects in the conduction intersubband transitions of undoped quantum wells
Author :
Sadeghi, S.M. ; Li, Wei
Author_Institution :
Dept. of Phys., Univ. of Toronto, Canada
Volume :
40
Issue :
4
fYear :
2004
fDate :
4/1/2004 12:00:00 AM
Firstpage :
343
Lastpage :
348
Abstract :
We study the effects of hole dispersion and mixing in the conduction intersubband transitions and infrared dressing of undoped quantum wells (QWs). This is done considering transitions of photo-excited electrons from one conduction subband (e1) to another (e2) in the presence of Coulomb interaction with the photo-excited holes. We show that, when the dispersion of the hole subband hh1 (lh1) is mainly parabolic, these transitions occur mainly between the s-states of e1-hh1 (e1-lh1) and e2-hh1 (e2-lh1) excitons with the same principal quantum numbers (allowed transitions). When the hole subbands have nonparabolic dispersions, however, such transitions are suppressed while another type of intersubband transitions in which the initial and final exciton states have different principal quantum numbers (nonallowed transitions) are enhanced. We show the enhancement and suppression processes reach their maxima when hh1 and lh1 are about to cross over, allowing multilevel mixing of excitons to occur when the undoped QW interacts with a single intense infrared field polarized along its growth. We associate these results with spinor mixing of hh1 and lh1 and illustrate how via changing the spinor contributions in these subbands one can employ strain to manipulate the dipole moments of the intersubband transitions.
Keywords :
conduction bands; electron mobility; excitons; hole mobility; infrared spectra; nonradiative transitions; optical modulation; optical pumping; quantum theory; semiconductor quantum wells; Coulomb interaction; allowed transitions; conduction intersubband transitions; conduction subband; dipole moments; enhancement processes; exciton states; hole dispersion; hole mixing; infrared dressing; infrared field; multilevel exciton mixing; nonallowed transitions; nonparabolic dispersions; optical modulator; photoexcited electrons; principal quantum numbers; spinor mixing; strain effects; suppression processes; undoped quantum wells; Capacitive sensors; Charge carrier processes; Excitons; Laser transitions; Nonlinear optical devices; Nonlinear optics; Optical mixing; Optical modulation; Semiconductor lasers; Ultrafast optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2004.824694
Filename :
1278599
Link To Document :
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