Title :
Carrier removal after H1+, H2+ or H3+ implants into GaAs
Author :
Gecim, H.C. ; Sealy, B.J. ; Stephens, K.G.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
It is demonstrated that the carrier removal caused by implanting equivalent doses of H1+ H2+ and H3+ ions into GaAs is identical and approximately independent of the ion energy in the range 300¿500 keV. Some recovery of carriers removed occurs at about 250°C.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; ion implantation; GaAs; H1+; H2+; H3+; carrier removal; ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760512
