Title :
Current-induced light modulation using quantum wells in the collector of heterojunction bipolar transistors
Author :
Shamir, Nachum ; Ritter, Dan ; Gershoni, David
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
fDate :
4/1/2004 12:00:00 AM
Abstract :
We incorporated InGaAs quantum wells within the collector of InP-based heterojunction bipolar transistors to form novel light-modulating devices. We studied the properties of these devices as light modulators by direct current injection. The devices were characterized using differential photocurrent and transmission spectroscopies. Our results demonstrate the feasibility of light modulation based on current rather than electric field modulation. Maximum modulation is achieved when the accumulated carriers quench the excitonic absorption resonance.
Keywords :
III-V semiconductors; electroabsorption; heterojunction bipolar transistors; indium compounds; optical modulation; photoconductivity; quantum well devices; semiconductor quantum wells; HBT collector; InGaAs quantum wells; InP-InGaAsP; current-induced light modulation; differential photocurrent; direct current injection; excitonic absorption resonance; heterojunction bipolar transistors; light modulators; light-modulating devices; transmission spectroscopies; Absorption; Carrier confinement; Electrons; Heterojunction bipolar transistors; Indium gallium arsenide; Optical modulation; Photoconductivity; Quantum well devices; Spectroscopy; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.825116
