Title :
M.N.O.S. memory structure with relatively thick oxide
Author :
Vitanov, P.K. ; Popova, L.I. ; Antov, B.Z.
Author_Institution :
Institute of Microelectronics, Sofia, Bulgaria
Abstract :
A new method for fabricating thick-oxide m.n.o.s. memory structures is proposed. On an SiO2 layer, about 50 Ã… thick W is deposited and removed by etching. It is assumed that W creates a level (or band) in the SiO2 band gap which greatly enhances the SiO2 conductance, resulting in improved charge-storage capability.
Keywords :
metal-insulator-semiconductor devices; semiconductor storage devices; charge storage; fabrication; thick oxide MNOS memory structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760521
