• DocumentCode
    940869
  • Title

    M.N.O.S. memory structure with relatively thick oxide

  • Author

    Vitanov, P.K. ; Popova, L.I. ; Antov, B.Z.

  • Author_Institution
    Institute of Microelectronics, Sofia, Bulgaria
  • Volume
    12
  • Issue
    25
  • fYear
    1976
  • Firstpage
    681
  • Abstract
    A new method for fabricating thick-oxide m.n.o.s. memory structures is proposed. On an SiO2 layer, about 50 Ã… thick W is deposited and removed by etching. It is assumed that W creates a level (or band) in the SiO2 band gap which greatly enhances the SiO2 conductance, resulting in improved charge-storage capability.
  • Keywords
    metal-insulator-semiconductor devices; semiconductor storage devices; charge storage; fabrication; thick oxide MNOS memory structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760521
  • Filename
    4240314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=940869