Title :
A double-barrier-emitter triangular-barrier optoelectronic switch
Author :
Guo, Der-Feng ; Chen, Jing-Yuh ; Chuang, Hung-Ming ; Chen, Chun-Yuan ; Liu, Wen-Chau
Author_Institution :
Dept. of Electron. Eng., Chinese Air Force Acad., Kaohsiung, Taiwan
fDate :
4/1/2004 12:00:00 AM
Abstract :
In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I--V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.
Keywords :
avalanche breakdown; negative resistance; optical switches; photoconducting switches; resonant tunnelling; semiconductor quantum wells; DTOS; avalanche multiplication; double-barrier structure; double-barrier-emitter triangular-barrier optoelectronic switch; hole confinement; negative-differential-resistance; p-type delta-doped quantum well; resonant tunneling; reversed-biased junction; Carrier confinement; Gallium arsenide; Indium gallium arsenide; Lighting; Molecular beam epitaxial growth; Optical switches; Photonic integrated circuits; Resonant tunneling devices; Substrates; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.825113
