DocumentCode :
940920
Title :
Energy resolving X-ray detectors using niobium absorbers and multiple quasiparticle tunneling between two aluminum traps
Author :
Mears, C.A. ; Labov, S.E. ; Morris, G.W. ; Cunningham, C.E. ; Le Gros, M.A. ; Silver, E.H. ; Barfknecht, A.T. ; Madden, N.W. ; Landis, D.A. ; Goulding, F.S. ; Bland, R.W. ; Laws, K.E. ; Dynes, R.C.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Volume :
3
Issue :
1
fYear :
1993
fDate :
3/1/1993 12:00:00 AM
Firstpage :
2092
Lastpage :
2095
Abstract :
Superconducting tunnel junction devices are being developed for use as high-resolution, high-efficiency X-ray spectrometers. A device with niobium X-ray absorbing layers coupled to two aluminum layers on either side of the tunneling barrier which serve as quasi-particle traps has been tested. These devices were fabricated photolithographically using a modified niobium/aluminum/niobium trilayer fabrication process. The first devices have a very thin barrier with specific normal state resistance of 1.5*10/sup -6/ Omega -cm/sup 2/, and also exhibit very low leakage current (<15 nA below 200 mK). The energy resolution at 6 keV was 120 eV full width at half maximum. It is estimated that each quasi-particle tunnels an average of eight times before recombining, increasing the total charge transferred and decreasing the effects of electronic noise.<>
Keywords :
X-ray detection and measurement; X-ray spectroscopy; aluminium; niobium; photolithography; quasi-particles; superconducting junction devices; type II superconductors; 6 keV; Al quasiparticle traps; Conductus device; Nb absorbers; Nb-Al; X-ray spectrometers; energy resolving X-ray detectors; high-efficiency; multiple quasiparticle tunneling; photolithographic fabrication; superconducting tunnel junctions; Aluminum; Energy resolution; Josephson junctions; Niobium; Spectroscopy; Superconducting devices; Superconducting epitaxial layers; Testing; Tunneling; X-ray detectors;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.233444
Filename :
233444
Link To Document :
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