DocumentCode :
941251
Title :
Stable charge storage of m.a.o.s. diodes on GaAs by new anodic oxidation
Author :
Bayraktaroglu, B. ; Hannah, S.J. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Volume :
13
Issue :
2
fYear :
1977
Firstpage :
45
Lastpage :
46
Abstract :
A method of native-oxide anodisation on GaAs, incorporating an Al2 O3 layer, is described. It is shown that such composite oxides on GaAs have superior electrical and physical characteristics to a system of native oxide only.
Keywords :
III-V semiconductors; anodisation; gallium arsenide; metal-insulator-semiconductor devices; GaAs; MAOS diode; anodic oxidation; charge storage;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19770032
Filename :
4240358
Link To Document :
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