• DocumentCode
    941251
  • Title

    Stable charge storage of m.a.o.s. diodes on GaAs by new anodic oxidation

  • Author

    Bayraktaroglu, B. ; Hannah, S.J. ; Hartnagel, H.L.

  • Author_Institution
    University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
  • Volume
    13
  • Issue
    2
  • fYear
    1977
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    A method of native-oxide anodisation on GaAs, incorporating an Al2 O3 layer, is described. It is shown that such composite oxides on GaAs have superior electrical and physical characteristics to a system of native oxide only.
  • Keywords
    III-V semiconductors; anodisation; gallium arsenide; metal-insulator-semiconductor devices; GaAs; MAOS diode; anodic oxidation; charge storage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770032
  • Filename
    4240358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=941251