Title :
Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode
Author :
Hashizume, Nobuo ; Kataoka, Shoei ; Tomizawa, Kazutaka
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Abstract :
A new Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode is proposed and its operation demonstrated with a monolithically fabricated device. Theoretical calculations show that the device could be modified into a static memory device if the Schottky electrode potential is chosen as the output.
Keywords :
Gunn devices; semiconductor storage devices; Gunn effect memory device; Schottky trigger electrode; charge accumulation; monolithically fabricated device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770042
