Title :
Enhancement-mode GaAs m.o.s.f.e.t. on semi-insulating substrate using a self-aligned gate technique
Author :
Kohn, Erhard ; Colquhoun, A.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
A self-aligned gate notched channel GaAs m.o.s.f.e.t. structure on semi-insulating substrate is presented. Device operation is mainly in enhancement mode. The transconductance is comparable to enhancement-mode m.e.s.f.e.t.s, j.f.e.t.s and s.i.g.f.e.t.s; however, the output-current capability is essentially increased.
Keywords :
insulated gate field effect transistors; GaAs; enhancement mode MOST; self aligned gate; semiinsulating substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770049
