High T/sub c/ superconductor and III-V solid state microwave hybrid circuits

Author

Shen, Z.Y. ; Pang, P. ; Wilker, C. ; Laubacher, D.B. ; Holstein, W.L. ; Carter, C.F., III ; Adlerstein, M.

Author_Institution

Du Pont, Central Res. & Dev., Wilmington, DE, USA

Volume

3

Issue

1

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

2832

Lastpage

2835

Abstract

Several high-temperature superconductor (HTS)/III-V solid-state hybrid microwave circuits were designed, fabricated, and tested. The I-V curves, S-parameters, and noise behavior for several solid-state devices at cryogenic temperatures were measured. Several high-electron-mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) C-band low-noise amplifiers were fabricated and tested at cryogenic temperatures with an additional gain of 3 dB when compared to their room-temperature gain. These amplifiers were also used in low-phase-noise oscillators stabilized by a HTS lambda /2 microstrip line resonator with a loaded Q-value of 3*10/sup 3/ or a sapphire-HTS resonator with a loaded Q-value of 1.2*10/sup 6/, both measured at 80 K. Preliminary measurement at 70 K indicates that the phase noise of an oscillator stabilized with a sapphire-HTS resonator was below -125 dBc/Hz at 10-kHz offset and limited by the test setup.<>

Keywords

III-V semiconductors; S-parameters; electron device noise; high-temperature superconductors; solid-state microwave circuits; superconducting microwave devices; 70 to 80 K; C-band; HBT; HEMT; HTSC resonator; HTSC/III-V semiconductor hybrid circuits; I-V curves; LNA; S-parameters; cryogenic temperatures; heterojunction bipolar transistor; high-electron-mobility transistor; high-temperature superconductor; low-noise amplifiers; low-phase-noise oscillators; microstrip line resonator; microwave hybrid circuits; noise behavior; sapphire; solid-state devices; Circuit testing; Cryogenics; HEMTs; Heterojunction bipolar transistors; High temperature superconductors; Low-noise amplifiers; Noise measurement; Oscillators; Solid state circuits; Temperature measurement;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.233492

Filename

233492