Title :
Low-frequency stability of impatt-diode circuits
Author_Institution :
Selenia S.p.A., Research Department, Roma, Italy
Abstract :
The maximum available stability of an impatt-diode circuit depends on the parasitic capacitance measured at the diode terminals. A formula is given relating the microwave characteristics of the circuit to the maximum parasitic capacitance compatible with freedom from spurious oscillation.
Keywords :
IMPATT diodes; circuit oscillations; frequency stability; microwave amplifiers; microwave oscillators; solid-state microwave circuits; IMPATT diode circuits; low frequency stability; microwave characteristics; parasitic capacitance; spurious oscillation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770055
