Title :
Performance of GaAs m.e.s.f.e.t. oscillators in the frequency range 8--25 GHz
Author :
Tserng, H.Q. ; Macksey, H.M. ; Sokolov, V.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
Performance results of microstrip GaAs m.e.s.f.e.t. oscillators operating in the frequency range 8--25 GHz are reported. It is shown that output powers as high as 500 mW and efficiencies as high as 45% can be achieved.
Keywords :
Schottky gate field effect transistors; microwave oscillators; solid-state microwave circuits; 8 to 25 GHz; GaAs MESFET oscillator; performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770057
