Title :
Computer simulation of charge generation in TRAPATTs
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
Charge production during an avalanche in trapatt diodes is investigated using a comprehensive large signal simulation program. Results for total charge production as a function of applied current density, saturation current density, diode width and temperature are described and compared with the predictions of a recent analysis.
Keywords :
TRAPATT diodes; digital simulation; electronic engineering computing; semiconductor device models; TRAPATT diode; applied current density; charge generation; computer simulation; diode width; large signal simulation; saturation current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770314
