Determination of the switching condition in the quantum-well double-heterostructure optoelectronic switch (DOES)

Author

Taylor, Geoffrey W. ; Cooke, Paul W.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2529

Lastpage

2540

Abstract

The switching mechanism in the GaAs/AlGaAs double-heterostructure optoelectronic switching device (DOES) is investigated in the context of the single-quantum-well graded index laser structure. A new charge conservation approach is introduced to explain the switching mechanism responsible for the thyristor-like behavior. Simple results are obtained for design purposes for currents, voltages, charges, and electric fields at the switching conditions. Switching energies are found to be on the order of 0.1-0.5 fJ/μm²

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical switches; photoelectric devices; semiconductor device models; semiconductor lasers; semiconductor switches; DOES; GRIN SQW laser; GaAs-AlGaAs; charge conservation approach; charges; currents; design purposes; double-heterostructure optoelectronic switch; electric fields; graded index laser structure; semiconductors; single-quantum-well; switching condition; switching energy; switching mechanism; thyristor-like behavior; voltages; High speed optical techniques; Optical bistability; Optical devices; Optical switches; Quantum cascade lasers; Quantum well devices; Quantum wells; Stimulated emission; Surface emitting lasers; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163452

Filename

163452