Title :
Microwave modulation by amorphous-semiconductor switches
Author :
Bose, D.N. ; Jani, B.J.
Author_Institution :
Indian Institute of Science, Department of Electrical Communication Engineering, Bangalore, India
Abstract :
Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.
Keywords :
amorphous semiconductors; modulators; semiconductor switches; solid-state microwave devices; X-band microwaves; amorphous semiconductor switches; applications; insertion loss; microwave modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770325
