• DocumentCode
    942035
  • Title

    Deep-level changes associated with the degradation of GaAs0.6 P0.4 l.e.d.s

  • Author

    L¿¿pez, C. ; Garc¿¿a, A. ; Mu¿¿oz, E.

  • Author_Institution
    ETS Ing. Telecomunicación, Madrid, Spain
  • Volume
    13
  • Issue
    16
  • fYear
    1977
  • Firstpage
    460
  • Lastpage
    461
  • Abstract
    The generation of deep levels in GaAS0.6 P0.4 electroluminescent diodes during forward-bias degradation has been studied by transient capacitance techniques. By comparison with the native trapping centres, it is concluded that only hole trap concentration increases during aging. This result is correlated through current/voltage, light/current, reverse-recovery-time and infrared-radiation measurements.
  • Keywords
    III-V semiconductors; gallium arsenide; light emitting diodes; GaAs0.6P0.4; LEDs; transient capacitance techniques;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770331
  • Filename
    4240449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942035