Title :
Low-frequency multiplication noise in reference diodes for small multiplication factors
Author :
Jevti¿¿, M.M. ; Tjapkin, D.A.
Author_Institution :
Faculty of Electronic Engineering, Ni¿, Yugoslavia
Abstract :
An analysis of the current dependence of multiplication noise for small multiplication factors (M < 103) is given, including the generation component of the reverse current and the position dependence of the ionisation coefficient of electrons (and holes) in the diode depletion region. Results are given for abrupt Si p¿n junctions.
Keywords :
electron device noise; semiconductor diodes; Si p-n junctions; diode depletion region; ionisation coefficient; low frequency multiplication noise; reference diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770338
