Title :
Effects of displaced p-n junction of heterojunction bipolar transistors
Author :
Zhang, Q.M. ; Tan, Gen-Lin ; Moore, W.T. ; Xu, J.M.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
fDate :
11/1/1992 12:00:00 AM
Abstract :
Two-dimensional simulations that demonstrate the effects of displacements of the p-n junctions from the heterojunctions of symmetrical Al0.28Ga0.72/GaAs double-heterojunction bipolar transistors (DHBTs) are reported. When the emitter and/or collector p-n junctions do not coincide with the AlGaAs/GaAs heterojunctions, the electrical characteristics are shown to be drastically altered due to changes in the potential profiles and to changes in recombination rates both in the neutral base and in the space-charge region of the emitter. The effects of a small displacement of the p-n junction from the emitter-base or the base-collector heterojunctions are examined and results for current gain β and cutoff frequency fT are given that demonstrate enhanced performance for DHBTs with p-n junctions that are not coincident with the heterojunctions
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; p-n junctions; semiconductor device models; 2D simulations; Al0.28Ga0.72-GaAs; AlGaAs-GaAs; DHBTs; base-collector heterojunctions; current gain; cutoff frequency; displaced p-n junction; double-heterojunction bipolar transistors; electrical characteristics; enhanced performance; heterojunction bipolar transistors; neutral base; p-n junction displacement; potential profiles; recombination rates; semiconductors; small displacement; space-charge region; symmetrical DHBTs; Analytical models; Bipolar transistors; Cutoff frequency; DH-HEMTs; Gallium arsenide; Heterojunction bipolar transistors; Numerical analysis; P-n junctions; Radiative recombination; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
