• DocumentCode
    942176
  • Title

    Model for charge propagation in a resistive-gate m.o.s. structure

  • Author

    Barsan, R.M.

  • Author_Institution
    R & D Institute for Electronic Components, Bucharest, Romania
  • Volume
    13
  • Issue
    16
  • fYear
    1977
  • Firstpage
    475
  • Lastpage
    477
  • Abstract
    A simple model is developed for the investigation of the charge-transport process in an m.o.s. transmission line. Closed-form solutions that compare well with numerical calculations are derived for the operational parameters of interest, by separating the propagation of charge into a transport step and a transfer step.
  • Keywords
    metal-insulator-semiconductor structures; semiconductor device models; transmission lines; MOS transmission line; charge propagation; resistive gate MOS structure; transfer step; transport step;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770344
  • Filename
    4240464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942176