A GaAs MESFET Oscillator Quasi-Linear Design Method

A simplified quasi-linear method is proposed to design a GaAs MESFET oscillator. By expressing the generated power P_gen as a function of FET gate and drain RF voltages, it is possible to maximize P_gen under the limiting conditions on intrinsic FET terminal voltage amplitudes. The feedback circuit elements to realize a GaAs MESFET oscillator are derived. An X-band GaAs MESFET oscillator was designed by the quasi-linear method and was fabricated by using microwave integrated-circuit technology.