• DocumentCode
    942195
  • Title

    Fabrication and properties of Nb/MgO/Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ tunnel junctions using crystalline and amorphous MgO films grown by the MBE method

  • Author

    Yamano, K. ; Shimaoka, K. ; Takahashi, K. ; Usuki, T. ; Yoshisato, Y. ; Nakano, S.

  • Author_Institution
    Sanyo Electr. Co. Ltd., Osaka, Japan
  • Volume
    3
  • Issue
    1
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    2222
  • Lastpage
    2245
  • Abstract
    The properties of tunnel-type junctions have been improved by using the Nb/MgO/Au/BSCCO structure. Tunneling spectroscopy was examined in junctions such as Nb/MgO/BSCCO and Nb/MgO/Au/BSCCO. MgO films for tunnel barriers were grown by molecular-beam epitaxy (MBE). In a Nb/MgO/BSCCO junction with no Au layer, the superconducting gap parameters, Delta , of BSCCO single crystals with crystalline and amorphous MgO barriers were estimated to be 25 meV and 38 meV, respectively. Nb/MgO/Au/BSCCO junctions with a 20-nm-thick Au layer indicated a clear gap structure induced by the proximity effect at 30 meV. These junction characteristics were confirmed to be closely related to the existence of interdiffusion between BSCCO and other materials.<>
  • Keywords
    bismuth compounds; calcium compounds; chemical interdiffusion; high-temperature superconductors; magnesium compounds; niobium; proximity effect; strontium compounds; superconducting energy gap; superconducting junction devices; tunnelling spectra; HTSC; MBE; Nb-MgO-Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ junctions; amorphous MgO films; crystalline MgO films; fabrication; interdiffusion; proximity effect; superconducting gap parameters; tunnel junctions; tunnelling spectroscopy; Bismuth compounds; Crystallization; Fabrication; Gold; Molecular beam epitaxial growth; Niobium; Spectroscopy; Superconducting epitaxial layers; Superconducting films; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.233563
  • Filename
    233563