• DocumentCode
    942232
  • Title

    Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm

  • Author

    Dentai, A.G. ; Lee, T.P. ; Burrus, C.A. ; Buehler, E.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    13
  • Issue
    16
  • fYear
    1977
  • Firstpage
    484
  • Lastpage
    485
  • Abstract
    Double-heterostructure InP/lnGaAsP/lnP high-radiance l.e.d.s have been fabricated by liquid-phase epitaxy on the <IIIB> face of commercially available InP substrates. The best small-area l.e.d.s had a useful external power efficiency of 1.5% and a 900 Å-wide emission spectrum centred at 1.23 μm. emitting ~3 mW into the air at 100 mA and 2 V; essentially similar results were obtained with devices operating al 1.30 μm.
  • Keywords
    indium compounds; light emitting diodes; InGaAsP LEDs; double heterostructure InP/InGaAsP/InP LEDs; external power efficiency; high-radiance CW; liquid phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770350
  • Filename
    4240470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942232