Low thermal resistance high-speed top-emitting 980-nm VCSELs

Author

Al-Omari, A.N. ; Carey, G.P. ; Hallstein, S. ; Watson, J.P. ; Dang, G. ; Lear, K.L.

Author_Institution

Electr. & Comput. Eng. Dept., Colorado State Univ., Fort Collins, CO

Volume

18

Issue

11

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1225

Lastpage

1227

Abstract

Increasing copper plated heatsink radii from 0 to 4 mum greater than the mesa in vertical-cavity surface-emitting lasers (VCSELs) reduced the measured thermal resistance for a range of device sizes to values 50% lower than previously reported over a range of device sizes. For a 9-mum diameter oxide aperture, the larger heatsink increases output power and bandwidth by 131% and 40%, respectively. The lasers exhibit a 3-dB modulation frequency bandwidth up to 9.8 GHz at 10.5 kA/cm². The functional dependence of thermal resistance on oxide aperture diameter indicates the importance of lateral heat flow to mesa sidewalls

Keywords

copper; frequency modulation; semiconductor device measurement; semiconductor lasers; surface emitting lasers; thermal resistance; 9 mum; Cu; copper plated heatsink; lateral heat flow; modulation frequency bandwidth; oxide aperture; thermal resistance; top-emitting VCSEL; vertical-cavity surface-emitting laser; Apertures; Bandwidth; Copper; Electrical resistance measurement; Resistance heating; Size measurement; Surface emitting lasers; Surface resistance; Thermal resistance; Vertical cavity surface emitting lasers; 3-dB frequency; heatsinks; modulation bandwidth; semiconductor laser diodes; thermal management; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.875059

Filename

1634551