Title :
Fabrication and characterization of HTS/semiconductor three terminal device
Author :
Huang, Q. ; Yoshikawa, N. ; Sugahara, M.
Author_Institution :
Fac. of Eng., Yokohama Nat. Univ., Japan
fDate :
3/1/1993 12:00:00 AM
Abstract :
The authors present preliminary experimental results of a high-T/sub c/ superconductor/semiconductor three-terminal device with a SUBSIT (superconducting base, semiconducting isolated transistor) structure, where Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ (BSCCO) and Te are used as superconducting base and semiconducting collector, respectively. The device with a Au/Te/BSCCO/BSCO/BSCCO structure is fabricated on a MgO
Keywords :
bipolar transistors; bismuth compounds; calcium compounds; high-temperature superconductors; strontium compounds; superconducting junction devices; tellurium; 1.4 mA; 15 K; 150 mV; Au-Te-BiSrCaCuO-BiSrCuO-BiSrCaCuO; Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/; HTS/semiconductor three terminal device; HTSC; MgO; RF magnetron sputtering; SUBSIT; Te; characterization; collector-base current; collector-base voltage; critical temperature; current gain coefficient; current injection; emitter current; emitter-base junction; fabrication; semiconducting collector; semiconducting isolated transistor; superconducting base; vacuum deposition; Bismuth compounds; Fabrication; Gold; High temperature superconductors; Magnetic devices; Radio frequency; Semiconductivity; Strontium; Substrates; Tellurium;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
