DocumentCode :
942344
Title :
High-Speed and Low-Power GaAs Phase Frequency Comparator
Author :
Osafune, Kazuo ; Ohwada, Kuniki ; Kato, Naoki
Volume :
34
Issue :
1
fYear :
1986
fDate :
1/1/1986 12:00:00 AM
Firstpage :
142
Lastpage :
146
Abstract :
A high-speed and low-power consumption phase frequency comparator (PFC) for a phase lock stable oscillator was designed and fabricated with a GaAs MESFET BFL circuit for the first time. The threshold voltage, gate width, and gate length of GaAs MESFET´s in the PFC were determined by circuit simulations for a high-speed and low-power operation. The fabrication process used buried p-layer SAINT-FET´s with 0.5-µm gate length. The fabricated PFC performed stable phase and frequency comparison up to 600 MHz at only 60 mW. Using dislocation-free wafers, the fabrication yield in the laboratory was more than 90 percent.
Keywords :
Circuit simulation; FETs; Fabrication; Frequency conversion; Gallium arsenide; Local oscillators; MESFET circuits; Semiconductor diodes; Threshold voltage; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1986.1133291
Filename :
1133291
Link To Document :
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