DocumentCode
942366
Title
Theory of depletion-layer recombination in silicon p--n junctions
Author
Anderson, P.J. ; Buckingham, M.J
Author_Institution
University of Reading, J.J. Thomson Physical Laboratory, Reading, UK
Volume
13
Issue
17
fYear
1977
Firstpage
496
Lastpage
498
Abstract
A new theory of depletion-layer recombination in silicon p-n junctions is presented, based on the recombination statistics of 3-charge-state centres. It is shown that, with an appropriate choice of recombination-centre parameters, the forward current/voltage characteristics predicted by the theory show voltage-independent m values of ≈ 1.5.
Keywords
electron-hole recombination; elemental semiconductors; p-n homojunctions; silicon; Si; depletion layer recombination theory; forward current/voltage characteristics; p-n junctions; recombination statistics; semiconductor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770364
Filename
4240490
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