Title :
Theory of depletion-layer recombination in silicon p--n junctions
Author :
Anderson, P.J. ; Buckingham, M.J
Author_Institution :
University of Reading, J.J. Thomson Physical Laboratory, Reading, UK
Abstract :
A new theory of depletion-layer recombination in silicon p-n junctions is presented, based on the recombination statistics of 3-charge-state centres. It is shown that, with an appropriate choice of recombination-centre parameters, the forward current/voltage characteristics predicted by the theory show voltage-independent m values of ≈ 1.5.
Keywords :
electron-hole recombination; elemental semiconductors; p-n homojunctions; silicon; Si; depletion layer recombination theory; forward current/voltage characteristics; p-n junctions; recombination statistics; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770364
