Title :
Investigation of guardring-free planar AlInAs avalanche photodiodes
Author :
Yagyu, Eiji ; Ishimura, Eitaro ; Nakaji, Masaharu ; Aoyagi, Toshitaka ; Yoshiara, Kiichi ; Tokuda, Yasunori
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo
fDate :
6/1/2006 12:00:00 AM
Abstract :
We analyze the operation principle and the characteristics of a guardring-free planar AlInAs avalanche photodiode (APD) by computational simulation and experimental results. The simple planar structure is based on a novel epitaxy-junction diode concept and its practical performance for 10-Gb/s optical receivers was successfully demonstrated. Electric field simulations clarified how edge multiplication, which is an inherent problem in APDs, is suppressed in the guardring-free structure. The experimental results, which are current-voltage, capacitance-voltage, and wide-range line scans of responsivity, support the simulation results, and the simulation explains the peculiar characteristics of the experimental results. The computational and the experimental analysis are consistent with one another
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; characteristics measurement; indium compounds; optical receivers; semiconductor device measurement; APD; edge multiplication; epitaxy-junction diode; optical receiver; planar AlInAs avalanche photodiode; responsivity; Absorption; Avalanche photodiodes; Computational modeling; Diodes; Indium phosphide; Optical fiber communication; Optical receivers; P-n junctions; Substrates; Zinc; Avalanche photodiodes (APDs); electric fields; optical fiber communication; optical receivers; simulation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.875523
