Title :
Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique
Author :
Palmstr¿¿m, C.J. ; Morgan, D.V. ; Howes, M.J.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Abstract :
Focused backscattering microanalysis has been used to overcome some of the problems associated with conventional backscattering. The small beam size enables the study of (a) small areas typical of real microwave devices, (b) lateral variations of the contact interdiffusion and (c) deep profiles when used in conjunction with angle lapped samples.
Keywords :
Gunn devices; III-V semiconductors; metallisation; ohmic contacts; particle backscattering; solid-state microwave devices; GaAs transferred electron devices; Gunn devices; angle lapped samples; contact degradation; contact interdiffusion; deep profiles; focused backscattering technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770368
