Title :
Leaky-wave photodiodes with a partially p-doped absorption Layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance
Author :
Chiu, W.-Y. ; Shi, J.-W. ; Wang, W.-K. ; Wu, Y.-S. ; Chan, Y.-J. ; Huang, Y.-L. ; Xuan, R.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan
fDate :
6/1/2006 12:00:00 AM
Abstract :
In this letter, we describe a novel edge-coupled photodiode (PD) structure, which can greatly relax the dependence of the responsivity on the cleaved length of an evanescently coupled optical waveguide. The integration of a leaky optical waveguide with a distributed Bragg reflector (DBR) and a partially p-doped photoabsorption layer allows the demonstrated device to exhibit a higher saturation current-bandwidth and responsivity than a control sample without the DBR structure. We achieved excellent speed (40-50 GHz), responsivity (0.8 A/W), and saturation current-bandwidth products (720 mAmiddotGHz at 40 GHz), comparable to the high-performance of an evanescently coupled PD, whose variation of responsivity is more sensitive to the cleaved waveguide length (30% versus 7%) than is our demonstrated device
Keywords :
distributed Bragg reflectors; integrated optoelectronics; optical waveguides; photodiodes; semiconductor doping; 40 to 50 GHz; distributed Bragg reflector; leaky optical waveguide; p-doped photoabsorption layer; photodiodes; responsivity; saturation current-bandwidth; Absorption; Distributed Bragg reflectors; Integrated optics; Optical coupling; Optical devices; Optical saturation; Optical sensors; Optical surface waves; Optical waveguides; Photodiodes; Distributed Bragg reflector (DBR); high-power photodiode (PD); leaky optical waveguide;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.875521
