Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes

Author

Baek, Sung-Ho ; Kim, Jeom-Oh ; Kwon, Min-Ki ; Park, Il-Kyu ; Na, Seok-In ; Kim, Ja-Yeon ; Kim, Bongjin ; Park, Seong-Ju

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.

Volume

18

Issue

11

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1276

Lastpage

1278

Abstract

To increase carrier confinement, the GaN barrier layer was substituted with an AlInGaN quaternary barrier layer which was lattice-matched to GaN in the GaN-InGaN multiple quantum wells (MQWs). Photoluminescence (PL) and high-resolution X-ray diffraction measurements showed that the AlInGaN barrier layer has a higher bandgap energy than the originally used GaN barrier layer. The PL intensity of the five periods of AlInGaN-InGaN MQWs was increased by three times compared to that of InGaN-GaN MQWs. The electroluminescence (EL) emission peak of AlInGaN-InGaN MQWs ultraviolet light-emitting diode (UV LED) was blue-shifted, compared to a GaN-InGaN MQWs UV LED and the integrated EL intensity of the AlInGaN-InGaN MQWs UV LED increased linearly up to 100 mA. These results indicated that the AlInGaN-InGaN MQWs UV LED has a stronger carrier confinement than a GaN-InGaN MQWs UV LED due to the larger barrier height of the AlInGaN barrier layer compared to a GaN barrier layer

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; energy gap; gallium compounds; indium compounds; light emitting diodes; photoluminescence; quantum well devices; spectral line shift; ultraviolet sources; wide band gap semiconductors; AlInGaN quaternary barrier layer; AlInGaN-InGaN; AlInGaN-InGaN quantum wells; GaN barrier layer; GaN-InGaN MQW; InGaN-GaN; X-ray diffraction; bandgap energy; blue shift; carrier confinement; electroluminescence; near ultraviolet light-emitting diodes; photoluminescence; Carrier confinement; Electroluminescence; Gallium nitride; Indium; Laboratories; Light emitting diodes; Materials science and technology; Photonic band gap; Quantum well devices; Solid state lighting; Carrier confinement; GaN; light-emitting diodes (LEDs); quaternary;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.875322

Filename

1634568