Conversion Losses in GaAs Schottky-Barrier Diodes (Short Paper)

The conversion losses of a Schottky-barrier diode have been calculated for a set of realistic diode parameters. It is found that previous work overestimated the substrate losses by 30 percent. It is also shown that a lightly doped epitaxial layer will decrease the barrier capacitance and with properly designed thickness will avoid any resistance losses due to this layer. Parasitic losses can thus be reduced substantially.