• DocumentCode
    942529
  • Title

    Leakage factor and burst noise in transistor arrays

  • Author

    Knott, K.F.

  • Author_Institution
    University of Salford, Department of Electrical Engineering, Salford, UK
  • Volume
    13
  • Issue
    18
  • fYear
    1977
  • Firstpage
    523
  • Lastpage
    524
  • Abstract
    Investigation of 4-transistor arrays in which the devices are very well matched at emitter currents above 100 nA has revealed correlation between burst noise and the departure from `matchness¿ at lower currents. A figure of merit based on the leakage currents ICBO,ICEO is introduced to compare individual devices and arrays.
  • Keywords
    bipolar transistors; electron device noise; leakage currents; random noise; burst noise; figure of merit; leakage currents; leakage factor; transistor arrays;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770378
  • Filename
    4240507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942529