Title :
Leakage factor and burst noise in transistor arrays
Author_Institution :
University of Salford, Department of Electrical Engineering, Salford, UK
Abstract :
Investigation of 4-transistor arrays in which the devices are very well matched at emitter currents above 100 nA has revealed correlation between burst noise and the departure from `matchness¿ at lower currents. A figure of merit based on the leakage currents ICBO,ICEO is introduced to compare individual devices and arrays.
Keywords :
bipolar transistors; electron device noise; leakage currents; random noise; burst noise; figure of merit; leakage currents; leakage factor; transistor arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770378
