Title :
Modelling of Gunn-domain effects in GaAs m.e.s.f.e.t.s
Author :
Willing, H.A. ; de Santis, P.
Author_Institution :
Naval Research Laboratory, Microwave Techniques Branch Electronics Technology Division, Washington, USA
Abstract :
GaAs m.e.s.f.e.t. [S22] values larger than unity have been measured from 1 to 10 GHz in the region where the ID/VD curves display a negative slope. An explanation of this phenomenon is proposed in terms of Gunn-domain formation. An equivalent-circuit model which includes this effect is presented and discussed.
Keywords :
Gunn effect; Schottky gate field effect transistors; equivalent circuits; semiconductor device models; solid-state microwave devices; 1 to 10 GHz; GaAs MESFET; Gunn domain effects; equivalent circuit model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770387
