Title :
Simplified GaAs m.e.s.f.e.t. model to 10 GHz
Author :
Minasian, Robert A.
Author_Institution :
University of Melbourne, Department of Electrical Engineering, Parkville, Australia
Abstract :
A simplified design-oriented equivalent circuit for the GaAs m.e.s.f.e.t. is presented. Its relation to a common, but more complex, model is derived and characteristics are compared. Element values are easily determined from measurements, and the simple model shows good agreement with measured parameters to 10 GHz for 1 ¿m-gate m.e.s.f.e.t.s.
Keywords :
Schottky gate field effect transistors; equivalent circuits; semiconductor device models; solid-state microwave devices; 10 GHz; GaAs MESFET model; equivalent circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770395
