DocumentCode
942726
Title
Quantum-mechanical simulation of electron waveguides in linear and nonlinear transport regimes
Author
Tsuchiya, Hideaki ; Ogawa, Matsuto ; Miyoshi, Tanroku
Author_Institution
Dept. of Electron. Eng., Kobe Univ., Japan
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2465
Lastpage
2471
Abstract
The linear and nonlinear quantum transport in an electron waveguide is simulated using the Wigner function model. In the linear transport regime, the effects of impurity scattering on the quantized conductance of the electron waveguide are studied in detail. The decrease of conductance and the deterioration of quantized steps due to impurity scattering are found to become more conspicuous as the impurity density increases. When the impurity density increases much more, the quantized steps of conductance disappear to approach the conductance values estimated by the classical model. In the nonlinear transport regime at large bias voltage, the current-voltage characteristics of the electron waveguide are studied at T =0 and 300 K. It is found that the conductance of the electron waveguide at low temperature deviates from the quantized value of 2e 2/h as the bias voltage increases. The possibility of the transistor operation of the electron waveguide at room temperature is discussed
Keywords
semiconductor quantum wires; transistors; 0 K; 300 K; Wigner function model; bias voltage; current-voltage characteristics; electron waveguides; impurity density; impurity scattering; linear quantum transport; linear transport regime; low temperature; nonlinear quantum transport; nonlinear transport regimes; quantized conductance; quantum mechanical simulation; room temperature; transistor operation; Electrons; Equations; Impurities; Optical scattering; Optical waveguides; Particle scattering; Quantum well devices; Temperature; Voltage; Wire;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163459
Filename
163459
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