• DocumentCode
    942745
  • Title

    Electrical properties of thermal oxides on GaAs

  • Author

    Butcher, D.N. ; Sealy, B.J.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    13
  • Issue
    19
  • fYear
    1977
  • Firstpage
    558
  • Lastpage
    559
  • Abstract
    The growth and electrical properties of oxides grown on GaAs at 510°C have been studied. Results show that growth with time follows a parabolic law and that electrical properties are, in general, very different from those of oxides grown anodically.
  • Keywords
    III-V semiconductors; electronic conduction in insulating thin films; gallium arsenide; insulating thin films; GaAs; electrical properties; oxidation; thermal oxides; thin films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770400
  • Filename
    4240534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=942745