Title :
Low-frequency noise sources in polysilicon emitter BJT´s: influence of hot-electron-induced degradation and post-stress recovery
Author :
Mounib, Ahmed ; Balestra, Francis ; Mathieu, Nathalie ; Brini, Jean ; Ghibaudo, Gerard ; Chovet, Alain ; Chantre, A. ; Nouailhat, A.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
9/1/1995 12:00:00 AM
Abstract :
The noise properties of polysilicon emitter bipolar transistors are studied. The influences of the various chemical treatments and annealing temperatures, prior and after polysilicon deposition, on the noise magnitude are shown. The impact of hot-electron-induced degradation and post-stress recovery on the base and collector current fluctuations are also investigated in order to determine the main noise sources of these devices and to gain insight into the physical mechanisms involved in these processes
Keywords :
1/f noise; annealing; bipolar transistors; elemental semiconductors; hot carriers; semiconductor device noise; semiconductor device reliability; silicon; Si; annealing temperatures; base current fluctuations; chemical treatments; collector current fluctuations; hot-electron-induced degradation; low-frequency noise sources; noise magnitude; physical mechanisms; polysilicon emitter BJT; post-stress recovery; Annealing; Bipolar transistors; CMOS technology; Chemical technology; Degradation; Etching; Fluctuations; Low-frequency noise; Semiconductor device noise; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
