Title :
Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET´s
Author :
Osman, Ashraf A. ; Osman, Mohamed A. ; Dogan, Numan S. ; Imam, Mohamed A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Washington State Univ., Pullman, WA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
Experimental and analytical results of the front gate bias (VGS) and the drain current (IDS) with the drain voltage (VDS) of partially depleted (PD) SOI MOSFET at the Zero-Temperature-Coefficient (ZTC) point over a very wide temperature range (25-300°C) are presented. Two distinct ZTC points are identified, one in the linear region and the other is in the saturation region. Additionally, the analysis takes into consideration the body effects, and mobility degradation with applied front gate bias. The analysis results are in excellent agreement with the experimental results
Keywords :
MOSFET; carrier mobility; silicon-on-insulator; 25 to 300 C; Si; body effects; drain current; drain voltage; front gate bias; linear region; mobility degradation; partially depleted SOI MOSFET; saturation region; zero-temperature-coefficient biasing point; Application specific integrated circuits; CMOS technology; Degradation; Intrusion detection; Leakage current; MOSFET circuits; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
