Comments on "Threshold voltage model for deep-submicrometer MOSFETs

For the original article see ibid., vol. 40, no. 1, p. 86-94 (1993). From the analytical solution of Poisson´s equation in the depletion layer of a MOSFET in weak inversion, the commenter finds an exact expression of the threshold voltage, valid for all drain biases and channel lengths (if they are greater than the minimum acceptable value) using the same procedure as in the aforementioned paper by Z.-H. Liu et al.<>