Title :
Two-Josephson-junction interferometer memory cell for n.d.r.o.
Author_Institution :
Universitÿt Karlsrÿhe, Institut fÿr Elektrotechnische Grundlagen der Informatik, Karlsrÿhe, West Germany
Abstract :
A single-flux-quantum random-access memory cell for nondestructive read-out and write has been designed and successfully simulated. The binary information is stored in an interferometer with two unequal Josephson junctions. No bias current is needed to store the information. Reasonable operation margins are obtained.
Keywords :
nondestructive readout; random-access storage; superconducting junction devices; Josephson junction interferometer memory cell; NDRO; RAM; nondestructive readout; single flux quantum random access memory cell;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770429
