• DocumentCode
    943089
  • Title

    Change of some properties of junction field-effect transistors after ionising irradiation

  • Author

    Dehmel, G. ; Br¿¿unig, D.

  • Author_Institution
    Technische Universitÿt Braunschweig, Institut fÿr Nachrichtentechnik, Braunschweig, West Germany
  • Volume
    13
  • Issue
    20
  • fYear
    1977
  • Firstpage
    601
  • Lastpage
    603
  • Abstract
    Measurements of the increase of equivalent noise-voltage spectral densities and gate leakage currents of the j.f.e.t.s 2N5521 and 2N6483 after ionising irradiation are reported. After an absorbed dose of 107 rad (Si), the noise and gate current are increased by factors of up to 10 and 500, respectively.
  • Keywords
    electron device noise; gamma-ray effects; junction gate field effect transistors; leakage currents; JFET; equivalent noise voltage spectral density; gate leakage currents; ionising irradiation; junction field effect transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770432
  • Filename
    4240573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=943089