Title :
Change of some properties of junction field-effect transistors after ionising irradiation
Author :
Dehmel, G. ; Br¿¿unig, D.
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Nachrichtentechnik, Braunschweig, West Germany
Abstract :
Measurements of the increase of equivalent noise-voltage spectral densities and gate leakage currents of the j.f.e.t.s 2N5521 and 2N6483 after ionising irradiation are reported. After an absorbed dose of 107 rad (Si), the noise and gate current are increased by factors of up to 10 and 500, respectively.
Keywords :
electron device noise; gamma-ray effects; junction gate field effect transistors; leakage currents; JFET; equivalent noise voltage spectral density; gate leakage currents; ionising irradiation; junction field effect transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770432
