DocumentCode :
943222
Title :
RF sampling gates: a brief review
Author :
Akers, N.P. ; Vilar, E.
Author_Institution :
Portsmouth Polytechnic, Department of Electrical and Electronic Engineering, Microwave Systems Research Group, Portsmouth, UK
Volume :
133
Issue :
1
fYear :
1986
fDate :
1/1/1986 12:00:00 AM
Firstpage :
45
Lastpage :
49
Abstract :
The paper contains a brief review of the various techniques employed for the sampling of RF and microwave signals, and reference is made to subharmonic sampling as one of the possible applications. Particular attention is given to the two- and four-diode gate arrangements and the associated pulse strategies for fast switching time are discussed, as are the theoretical and practical aspects associated with the use of finite risetime sampling pulse trains. The design and operation of an experimental 10 GHz GaAs FET unit are given in detail, and recommendations are given in the concluding Section as regards development effort in sampling gates.
Keywords :
data acquisition; field effect transistors; microwave measurement; sample and hold circuits; solid-state microwave circuits; 10 GHz GaAs FET; RF sampling gates; finite rise-time sampling; four-diode gate; microwave samples; microwave sampling gates; pulse trains; subharmonic sampling; two diode gate;
fLanguage :
English
Journal_Title :
Physical Science, Measurement and Instrumentation, Management and Education - Reviews, IEE Proceedings A
Publisher :
iet
ISSN :
0143-702X
Type :
jour
DOI :
10.1049/ip-a-1.1986.0006
Filename :
4647777
Link To Document :
بازگشت