Effect of the reverse bias between channel and substrate on the effective mobility of electrons in a Ge i.g.f.e.t.

An analysis of the behaviour of the electron effective mobility under reverse bias between the channel and substrate in a germanium i.g.f.e.t. is presented. It is shown that the experimentally observed decrease in the effective mobility of the electrons in the channel is mainly caused by the decrease in the electron drift mobility in the channel, rather than by surface-state capture.