DocumentCode
943283
Title
Octave-band GaAs f.e.t. y.i.g.-tuned oscillators
Author
Trew, R.J.
Author_Institution
Watkins-Johnson Company, Palo Alto, USA
Volume
13
Issue
21
fYear
1977
Firstpage
629
Lastpage
630
Abstract
The design of a y.i.g.-tuned f.e.t. oscillator that covers the X-band octave of 6 to 12 GHz is presented. The oscillator uses a compound feedback scheme to generate a negative conductance over the required bandwidth. Excellent agreement is obtained between the computer predictions and the experimental results.
Keywords
field effect transistor circuits; microwave oscillators; solid-state microwave circuits; GaAs; YIG tuned FET oscillator; compound feedback scheme; negative conductance; octave band;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770450
Filename
4240594
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