Title :
Structural and electrical profiles for double damage layers in ion-implanted silicon
Author :
Sadana, D.K. ; Fletcher, J. ; Booker, G.R.
Author_Institution :
University of Oxford, Department of Metallurgy & Science of Materials, Oxford, UK
Abstract :
(111) Si specimens were implanted at room temperature with 5 × 1014 cm¿2, 120 keVP+ ions, and annealed at 950°C. Transmission electron-microscope cross-section specimens revealed two discrete damage layers at depths of 95 and 190 nm. Electrical profiles showed decreases in carrier concentration and/or mobility at these two depths.
Keywords :
carrier density; carrier mobility; elemental semiconductors; ion implantation; silicon; transmission electron microscope examination of materials; Si; carrier concentration; double damage layers; electrical profiles; ion implanted Si; mobility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770452
