Title :
Gunn-effect high-speed carry finding device for 8 bit binary adder
Author :
Hashizume, Nobuo ; Kataoka, Shoei ; Tomizawa, Kazutaka
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Abstract :
A high-speed carry finding device consisting of seven inhibitors, each an integrated Schottky electrode-triggered Gunn device and an m.e.s.f.e.t., was fabricated monolithically. The device could find and store carry signals of all digits in 330 ps at the worst logic case. The anode-voltage margin was 11%
Keywords :
Gunn devices; adders; 8 bit binary adder; Gunn effect; high speed carry finding device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770455
