M.I.S. and Schottky slow-wave coplanar striplines on GaAs substrates

Novel slow-wave coplanai striplines on GaAs substrates with m.i.s. or Schottky junctions are described. With these lines, significant reductions in wavelength and bias-dependent behaviours can be achieved at microwave frequencies. The new lines seem potentially very useful for monolithic integration of microwave circuits involving GaAs m.e.s.f.e.t.s.