Hole traps in bulk and epitaxial GaAs crystals

Twelve different hole traps have been characterised in v.p.e., 1.p.e., m.b.e. and bulk-grown GaAs from d.1.t.s. experiments. Most are related to the presence of different impurities, some of which are identified. Although far from complete, this catalogue of hole traps can be a working tool, particularly for the assessment of the impurity contamination in a material.