DocumentCode
943556
Title
Performance of p-i-n photodiode compared with avalance photodiode in the longer-wavelength region of 1 to 2 μm
Author
Hata, S. ; Kajiyama, K. ; Mizushima, Y.
Author_Institution
NTT, Electrical Communication Laboratories, Musashino, Japan
Volume
13
Issue
22
fYear
1977
Firstpage
668
Lastpage
669
Abstract
The signal/noise ratio is estimated in comparing p--i--n and a.p.d. photodetectors. In the longer-wavelength region, the p--i--n diode is expected to be superior to the a.p.d., although, in the shorter-wavelength region, under 1.0μm, the converse is true.
Keywords
avalanche diodes; electron device noise; photodiodes; 1 to 2 microns; avalanche photodiode; p-i-n photodiode; photodetectors; signal/noise ratio;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770474
Filename
4240619
Link To Document